Mobility enhancement in indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by application of <110> uniaxial strain
Author(s)Xia, Ling; del Alamo, Jesus A.
Mobility enhancement in indium-rich N-channel InxGa1-xAs HEMTs by application of <110> uniaxial strain
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As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of <;110> uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel core. The main impact of strain is found to be a modification of the electron effective mass and mobility. A comparison between the effect of <;110> strain in Si and InGaAs suggests that strain engineering can indeed be leveraged to improve transport properties in deeply scaled InGaAs FETs.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Proceedings of the 2010 International Conference on Indium Phosphide & Related Materials (IPRM), 22nd IPRM, May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan
Institute of Electrical and Electronics Engineers
Xia, Ling, and Jesus. A. del Alamo. “Mobility Enhancement in Indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by Application of <110> Uniaxial Strain.” IEEE, Proceedings of the 2010 International Conference on Indium Phosphide & Related Materials (IPRM), 22nd IPRM, May31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan. 1–4. Web. ©2010 IEEE.
Final published version
INSPEC Accession Number: 11485059