Functional renormalization group and variational Monte Carlo studies of the electronic instabilities in graphene near 1/4 doping
Author(s)
Wang, Wan-Sheng; Xiang, Yuan-Yuan; Wang, Qiang-Hua; Wang, Fa; Yang, Fan; Lee, Dung-Hai; ... Show more Show less
DownloadWang-2012-Functional renormalization group and.pdf (705.8Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We study the electronic instabilities of near 1/4 electron doped graphene using the singular-mode functional renormalization group, with a self-adaptive k mesh to improve the treatment of the van Hove singularities, and variational Monte Carlo method. At 1/4 doping the system is a chiral spin-density wave state exhibiting the anomalous quantized Hall effect. When the doping deviates from 1/4, the dx[superscript 2]−y[superscript 2]+id[subscript xy] Cooper pairing becomes the leading instability. Our results suggest that near 1/4 electron or hole doping (away from the neutral point) the graphene is either a Chern insulator or a topoligical superconductor.
Date issued
2012-01Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review B
Publisher
American Physical Society
Citation
Wang, Wan-Sheng et al. “Functional Renormalization Group and Variational Monte Carlo Studies of the Electronic Instabilities in Graphene Near 1/4 Doping.” Physical Review B 85.3 (2012): 035414-1-035414-6. ©2012 American Physical Society.
Version: Final published version
ISSN
1098-0121
1550-235X