Delay Analysis of Graphene Field-Effect Transistors
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In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.
Date issued
2012-02Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “Delay Analysis of Graphene Field-Effect Transistors.” IEEE Electron Device Letters 33.3 (2012): 324–326.
Version: Author's final manuscript
ISSN
0741-3106