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dc.contributor.authorJoh, Jungwoo
dc.contributor.authordel Alamo, Jesus A.
dc.date.accessioned2012-09-10T13:41:16Z
dc.date.available2012-09-10T13:41:16Z
dc.date.issued2011-06
dc.date.submitted2011-04
dc.identifier.isbn978-1-4244-9111-7
dc.identifier.isbn978-1-4244-9113-1
dc.identifier.issn1541-7026
dc.identifier.urihttp://hdl.handle.net/1721.1/72586
dc.description.abstractIn this work, we investigate the time evolution of electrical degradation of GaN high electron mobility transistors under high voltage stress in the OFF state. We found that the gate current starts to degrade first, followed by degradation in current collapse and eventually permanent degradation in I[subscript D]. We also found that the time evolution of gate current degradation is unaffected by temperature, while drain current degradation is thermally accelerated.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IRPS.2011.5784511en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alike 3.0en_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en_US
dc.sourceMIT web domainen_US
dc.titleTime evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistorsen_US
dc.typeArticleen_US
dc.identifier.citationJoh, Jungwoo, and Jesus A. del Alamo. “Time Evolution of Electrical Degradation Under High-voltage Stress in GaN High Electron Mobility Transistors.” IEEE International Reliability Physics Symposium 2011 (IRPS). 4E.3.1–4E.3.4.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverdel Alamo, Jesus A.
dc.contributor.mitauthorJoh, Jungwoo
dc.contributor.mitauthordel Alamo, Jesus A.
dc.relation.journalIEEE International Reliability Physics Symposium 2011 (IRPS)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
dspace.orderedauthorsJoh, Jungwoo; del Alamo, Jesus A.en
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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