Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

Author(s)
Gao, Feng; Lo, Hsin-Yi; Ram, Rajeev J.; Palacios, Tomas
Thumbnail
DownloadPalacios_Self-consistent electro-thermal.pdf (878.4Kb)
PUBLISHER_POLICY
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement.
Date issued
2010-06
URI
http://hdl.handle.net/1721.1/72676
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Proceedings of the Device Research Conference (DRC), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Gao, Feng et al. “Self-consistent Electro-thermal Simulation of AlGaN/GaN HEMTs for Reliability Prediction.” Device Research Conference (DRC), 2010. 127–128. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-6563-7
978-1-4244-6562-0
ISSN
1548-3770
Collections