| dc.contributor.author | Gao, Feng | |
| dc.contributor.author | Lo, Hsin-Yi | |
| dc.contributor.author | Ram, Rajeev J. | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2012-09-12T19:40:20Z | |
| dc.date.available | 2012-09-12T19:40:20Z | |
| dc.date.issued | 2010-06 | |
| dc.date.submitted | 2010-06 | |
| dc.identifier.isbn | 978-1-4244-6563-7 | |
| dc.identifier.isbn | 978-1-4244-6562-0 | |
| dc.identifier.issn | 1548-3770 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/72676 | |
| dc.description.abstract | n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement. | en_US |
| dc.description.sponsorship | United States. Office of Naval Research | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/DRC.2010.5551870 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Gao, Feng et al. “Self-consistent Electro-thermal Simulation of AlGaN/GaN HEMTs for Reliability Prediction.” Device Research Conference (DRC), 2010. 127–128. © Copyright 2010 IEEE | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.approver | Palacios, Tomas | |
| dc.contributor.mitauthor | Gao, Feng | |
| dc.contributor.mitauthor | Lo, Hsin-Yi | |
| dc.contributor.mitauthor | Ram, Rajeev J. | |
| dc.contributor.mitauthor | Palacios, Tomas | |
| dc.relation.journal | Proceedings of the Device Research Conference (DRC), 2010 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
| dspace.orderedauthors | Gao, Feng; Lo, Hsin-Yi; Ram, Rajeev; Palacios, Tomas | en |
| dc.identifier.orcid | https://orcid.org/0000-0003-0420-2235 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
