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GaN power electronics

Author(s)
Lu, Bin; Piedra, Daniel; Palacios, Tomas
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Abstract
Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems. We will describe three key technologies: Schottky drain contacts and substrate removal to increase the breakdown voltage, and a dual-gate device with superior enhancement-mode characteristics.
Date issued
2010-12
URI
http://hdl.handle.net/1721.1/72948
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Proceedings of the 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Bin, Daniel Piedra, and Tomas Palacios. “GaN Power Electronics.” 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010. 105–110. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-8574-1

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