| dc.contributor.author | Lu, Bin | |
| dc.contributor.author | Piedra, Daniel | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2012-09-14T13:32:35Z | |
| dc.date.available | 2012-09-14T13:32:35Z | |
| dc.date.issued | 2010-12 | |
| dc.date.submitted | 2010-10 | |
| dc.identifier.isbn | 978-1-4244-8574-1 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/72948 | |
| dc.description.abstract | Between 5 and 10% of the world's electricity is wasted as dissipated heat in the power electronic circuits needed, for example, in computer power supplies, motor drives or the power inverters of photovoltaic systems. This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems. We will describe three key technologies: Schottky drain contacts and substrate removal to increase the breakdown voltage, and a dual-gate device with superior enhancement-mode characteristics. | en_US |
| dc.description.sponsorship | Massachusetts Institute of Technology. Energy Initiative | en_US |
| dc.description.sponsorship | United States. Dept. of Energy. GaN Electronics for Grid Applications | en_US |
| dc.description.sponsorship | Semiconductor Research Corporation. Interconnect Focus Center. Microelectronics Advanced Research Corporation (MARCO) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/ASDAM.2010.5666311 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | GaN power electronics | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Lu, Bin, Daniel Piedra, and Tomas Palacios. “GaN Power Electronics.” 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010. 105–110. © Copyright 2010 IEEE | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.approver | Palacios, Tomas | |
| dc.contributor.mitauthor | Lu, Bin | |
| dc.contributor.mitauthor | Piedra, Daniel | |
| dc.contributor.mitauthor | Palacios, Tomas | |
| dc.relation.journal | Proceedings of the 8th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
| dspace.orderedauthors | Lu, Bin; Piedra, Daniel; Palacios, Tomas | en |
| dc.identifier.orcid | https://orcid.org/0000-0002-8104-9097 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
| dc.identifier.orcid | https://orcid.org/0000-0003-2208-0665 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
