Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene

Author(s)
Wang, Han; Hsu, Allen Long; Kim, Ki Kang; Kong, Jing; Palacios, Tomas
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Abstract
Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.
Date issued
2010-12
URI
http://hdl.handle.net/1721.1/72955
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “Gigahertz Ambipolar Frequency Multiplier Based on CVD Graphene.” Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010. 23.6.1–23.6.4. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-7419-6
978-1-4424-7418-5
ISSN
0163-1918
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