| dc.contributor.author | Wang, Han | |
| dc.contributor.author | Hsu, Allen Long | |
| dc.contributor.author | Kim, Ki Kang | |
| dc.contributor.author | Kong, Jing | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2012-09-14T15:08:49Z | |
| dc.date.available | 2012-09-14T15:08:49Z | |
| dc.date.issued | 2010-12 | |
| dc.date.submitted | 2010-12 | |
| dc.identifier.isbn | 978-1-4244-7419-6 | |
| dc.identifier.isbn | 978-1-4424-7418-5 | |
| dc.identifier.issn | 0163-1918 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/72955 | |
| dc.description.abstract | Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications. | en_US |
| dc.description.sponsorship | United States. Office of Naval Research. Multidisciplinary University Research Initiative. Graphene Approaches to Terahertz Electronics | en_US |
| dc.description.sponsorship | Semiconductor Research Corporation. Center for Materials, Structures and Devices | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/IEDM.2010.5703423 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Wang, Han et al. “Gigahertz Ambipolar Frequency Multiplier Based on CVD Graphene.” Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010. 23.6.1–23.6.4. © Copyright 2010 IEEE | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.approver | Kong, Jing | |
| dc.contributor.mitauthor | Wang, Han | |
| dc.contributor.mitauthor | Hsu, Allen Long | |
| dc.contributor.mitauthor | Kim, Ki Kang | |
| dc.contributor.mitauthor | Kong, Jing | |
| dc.contributor.mitauthor | Palacios, Tomas | |
| dc.relation.journal | Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
| dspace.orderedauthors | Wang, Han; Hsu, Allen; Ki Kang Kim, Allen; Jing Kong, Allen; Palacios, Tomas | en |
| dc.identifier.orcid | https://orcid.org/0000-0003-0551-1208 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
