Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors
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In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
Date issued
2009-06Department
Lincoln Laboratory; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Transactions on Applied Superconductivity
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yang, J.K.W. et al. “Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors <newline/>With High Fill-Factors.” IEEE Transactions on Applied Superconductivity 19.3 (2009): 318–322. © Copyright 2009 IEEE
Version: Final published version
ISSN
1051-8223
1558-2515