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dc.contributor.authorYang, Joel K. W.
dc.contributor.authorKerman, Andrew J.
dc.contributor.authorDauler, Eric A.
dc.contributor.authorCord, Bryan M.
dc.contributor.authorAnant, Vikas
dc.contributor.authorMolnar, Richard J.
dc.contributor.authorBerggren, Karl K.
dc.date.accessioned2012-09-26T16:32:30Z
dc.date.available2012-09-26T16:32:30Z
dc.date.issued2009-06
dc.date.submitted2009-01
dc.identifier.issn1051-8223
dc.identifier.issn1558-2515
dc.identifier.urihttp://hdl.handle.net/1721.1/73188
dc.description.abstractIn this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.en_US
dc.description.sponsorshipUnited States. Air Force (Contract FA8721-05-C-0002)en_US
dc.description.sponsorshipUnited States. Intelligence Advanced Research Projects Activityen_US
dc.description.sponsorshipSingapore. Agency for Science, Technology and Researchen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/tasc.2009.2017953en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleSuppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factorsen_US
dc.typeArticleen_US
dc.identifier.citationYang, J.K.W. et al. “Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors <newline/>With High Fill-Factors.” IEEE Transactions on Applied Superconductivity 19.3 (2009): 318–322. © Copyright 2009 IEEEen_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorYang, Joel K. W.
dc.contributor.mitauthorKerman, Andrew J.
dc.contributor.mitauthorDauler, Eric A.
dc.contributor.mitauthorCord, Bryan M.
dc.contributor.mitauthorAnant, Vikas
dc.contributor.mitauthorMolnar, Richard J.
dc.contributor.mitauthorBerggren, Karl K.
dc.relation.journalIEEE Transactions on Applied Superconductivityen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsYang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K.en
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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