Processing and properties of ytterbium-erbium silicate thin film gain media
Author(s)
Vanhoutte, Michiel; Wang, Bing; Michel, Jurgen; Kimerling, Lionel C.
DownloadVanhoutte-2009-Processing and properties of ytterbium-erbium silicate thin film gain media.pdf (637.5Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RF-magnetron co-sputtering of Er[subscript 2]O[subscript 3], Yb[subscript 2]O[subscript 3] and SiO[subscript 2] on c-Si and subsequent annealing in N[subscript 2] or O[subscript 2] atmosphere.
Date issued
2009-09Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
Proceedings of the 6th IEEE International Conference on Group IV Photonics, 2009 (GFP '09)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Vanhoutte, Michiel et al. “Processing and properties of ytterbium-erbium silicate thin film gain media.” IEEE, 2009. 63-65. © Copyright 2009 IEEE
Version: Final published version
ISBN
978-1-4244-4403-8