Neon Ion Beam Lithography (NIBL)

Author(s)
Winston, Donald; Manfrinato, Vitor Riseti; Nicaise, Samuel M.; Cheong, Lin Lee; Duan, Huigao; ... Show more
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Abstract
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
Date issued
2011-09
URI
http://hdl.handle.net/1721.1/74050
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Winston, Donald et al. “Neon Ion Beam Lithography (NIBL).” Nano Letters 11.10 (2011): 4343–4347.
Version: Author's final manuscript
ISSN
1530-6984
1530-6992
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