Neon Ion Beam Lithography (NIBL)
Author(s)Winston, Donald; Manfrinato, Vitor Riseti; Nicaise, Samuel M.; Cheong, Lin Lee; Duan, Huigao; Ferranti, David; Marshman, Jeff; McVey, Shawn; Stern, Lewis; Notte, John; Berggren, Karl K.; ... Show more Show less
MetadataShow full item record
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
American Chemical Society (ACS)
Winston, Donald et al. “Neon Ion Beam Lithography (NIBL).” Nano Letters 11.10 (2011): 4343–4347.
Author's final manuscript