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Neon Ion Beam Lithography (NIBL)

dc.contributor.authorWinston, Donald
dc.contributor.authorManfrinato, Vitor Riseti
dc.contributor.authorNicaise, Samuel M.
dc.contributor.authorCheong, Lin Lee
dc.contributor.authorDuan, Huigao
dc.contributor.authorFerranti, David
dc.contributor.authorMarshman, Jeff
dc.contributor.authorMcVey, Shawn
dc.contributor.authorStern, Lewis
dc.contributor.authorNotte, John
dc.contributor.authorBerggren, Karl K.
dc.date.accessioned2012-10-17T18:36:22Z
dc.date.available2012-10-17T18:36:22Z
dc.date.issued2011-09
dc.date.submitted2011-08
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.urihttp://hdl.handle.net/1721.1/74050
dc.description.abstractExisting techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Center for Excitonics (Award DE-SC0001088)en_US
dc.language.isoen_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/nl202447nen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleNeon Ion Beam Lithography (NIBL)en_US
dc.typeArticleen_US
dc.identifier.citationWinston, Donald et al. “Neon Ion Beam Lithography (NIBL).” Nano Letters 11.10 (2011): 4343–4347.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorWinston, Donald
dc.contributor.mitauthorManfrinato, Vitor Riseti
dc.contributor.mitauthorNicaise, Samuel M.
dc.contributor.mitauthorCheong, Lin Lee
dc.contributor.mitauthorDuan, Huigao
dc.contributor.mitauthorBerggren, Karl K.
dc.relation.journalNano Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWinston, Donald; Manfrinato, Vitor R.; Nicaise, Samuel M.; Cheong, Lin Lee; Duan, Huigao; Ferranti, David; Marshman, Jeff; McVey, Shawn; Stern, Lewis; Notte, John; Berggren, Karl K.en
dc.identifier.orcidhttps://orcid.org/0000-0003-3329-9099
dc.identifier.orcidhttps://orcid.org/0000-0002-9129-4731
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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