Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist
Author(s)
Winston, Donald; Cord, Bryan M.; Ming, B.; Bell, David C.; DiNatale, W. F.; Stern, L. A.; Vladar, A. E.; Postek, M. T.; Mondol, Mark K.; Yang, Joel K. W.; Berggren, Karl K.; ... Show more Show less
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Show full item recordAbstract
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub-10 nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.
Date issued
2009-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Winston, D. et al. “Scanning-helium-ion-beam Lithography with Hydrogen Silsesquioxane Resist.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2702. © 2009 American Vacuum Society
Version: Final published version
ISSN
1071-1023
1520-8567