Show simple item record

Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

dc.contributor.authorWinston, Donald
dc.contributor.authorCord, Bryan M.
dc.contributor.authorMing, B.
dc.contributor.authorBell, David C.
dc.contributor.authorDiNatale, W. F.
dc.contributor.authorStern, L. A.
dc.contributor.authorVladar, A. E.
dc.contributor.authorPostek, M. T.
dc.contributor.authorMondol, Mark K.
dc.contributor.authorYang, Joel K. W.
dc.contributor.authorBerggren, Karl K.
dc.date.accessioned2012-10-18T19:19:48Z
dc.date.available2012-10-18T19:19:48Z
dc.date.issued2009-12
dc.date.submitted2009-07
dc.identifier.issn1071-1023
dc.identifier.issn1520-8567
dc.identifier.urihttp://hdl.handle.net/1721.1/74106
dc.description.abstractA scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub-10 nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Graduate Research Fellowship Programen_US
dc.language.isoen_US
dc.publisherAmerican Vacuum Society (AVS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.3250204en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleScanning-helium-ion-beam lithography with hydrogen silsesquioxane resisten_US
dc.typeArticleen_US
dc.identifier.citationWinston, D. et al. “Scanning-helium-ion-beam Lithography with Hydrogen Silsesquioxane Resist.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2702. © 2009 American Vacuum Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorWinston, Donald
dc.contributor.mitauthorCord, Bryan M.
dc.contributor.mitauthorMondol, Mark K.
dc.contributor.mitauthorYang, Joel K. W.
dc.contributor.mitauthorBerggren, Karl K.
dc.relation.journalJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structuresen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWinston, D.; Cord, B. M.; Ming, B.; Bell, D. C.; DiNatale, W. F.; Stern, L. A.; Vladar, A. E.; Postek, M. T.; Mondol, M. K.; Yang, J. K. W.; Berggren, K. K.en
dc.identifier.orcidhttps://orcid.org/0000-0002-3031-4890
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


Files in this item

Thumbnail
Name:
Berggren-Scanning-helium-ion-b ...
Size:
248.3Kb
Format:
PDF
View/Open

This item appears in the following Collection(s)

Show simple item record