FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics

Author(s)
Vitale, Steven A.; Wyatt, Peter W.; Checka, Nisha; Kedzierski, Jakub T.; Keast, Craig L.
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Abstract
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/74123
Department
Lincoln Laboratory
Journal
Proceedings of the IEEE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Vitale, S.A. et al. “FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics.” Proceedings of the IEEE 98.2 (2010): 333–342. © 2010 IEEE
Version: Final published version
ISSN
0018-9219
1558-2256
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