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dc.contributor.authorVitale, Steven A.
dc.contributor.authorWyatt, Peter W.
dc.contributor.authorChecka, Nisha
dc.contributor.authorKedzierski, Jakub T.
dc.contributor.authorKeast, Craig L.
dc.date.accessioned2012-10-18T20:41:30Z
dc.date.available2012-10-18T20:41:30Z
dc.date.issued2010-02
dc.date.submitted2010-01
dc.identifier.issn0018-9219
dc.identifier.issn1558-2256
dc.identifier.urihttp://hdl.handle.net/1721.1/74123
dc.description.abstractUltralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/jproc.2009.2034476en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleFDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronicsen_US
dc.typeArticleen_US
dc.identifier.citationVitale, S.A. et al. “FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics.” Proceedings of the IEEE 98.2 (2010): 333–342. © 2010 IEEEen_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.mitauthorVitale, Steven A.
dc.contributor.mitauthorWyatt, Peter W.
dc.contributor.mitauthorChecka, Nisha
dc.contributor.mitauthorKedzierski, Jakub T.
dc.contributor.mitauthorKeast, Craig L.
dc.relation.journalProceedings of the IEEEen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsVitale, S.A.; Wyatt, P.W.; Checka, N.; Kedzierski, J.; Keast, C.L.en
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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