Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
Author(s)
Newman, Bonna Kay; Buonassisi, Tonio; Sher, Meng-Ju; Mazur, Eric
DownloadBuonassisi_Reactivation of sub.pdf (428.5Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 and 1550 K followed by fast cooling (>50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high temperatures in hyperdoped Si:chalcogen systems.
Date issued
2011-06Department
Massachusetts Institute of Technology. Department of Mechanical EngineeringJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Newman, Bonna K. et al. “Reactivation of Sub-bandgap Absorption in Chalcogen-hyperdoped Silicon.” Applied Physics Letters 98.25 (2011): 251905. © 2011 American Institute of Physics
Version: Final published version
ISSN
0003-6951
1077-3118