Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells
Author(s)
Bertoni, Mariana I.; Hudelson, S.; Newman, Bonna Kay; Bernardis, S.; Fenning, David P.; Dekkers, H. F. W.; Cornagliotti, E.; Zuschlag, A.; Micard, G.; Hahn, G.; Coletti, G.; Lai, Barry; Buonassisi, Tonio; ... Show more Show less
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In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
Date issued
2010-06Department
Massachusetts Institute of Technology. Department of Mechanical EngineeringJournal
Proceedings of the 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers
Citation
Bertoni, M.I. et al. “Impact of Defect Type on Hydrogen Passivation Effectiveness in Multicrystalline Silicon Solar Cells.” 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Hawaiian Convention Center, Honolulu, HI, USA, IEEE, 2010. 000345–000346. CrossRef. Web. ©2010 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11625881
ISBN
978-1-4244-5890-5
ISSN
0160-8371