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dc.contributor.authorBertoni, Mariana I.
dc.contributor.authorHudelson, S.
dc.contributor.authorNewman, Bonna Kay
dc.contributor.authorBernardis, S.
dc.contributor.authorFenning, David P.
dc.contributor.authorDekkers, H. F. W.
dc.contributor.authorCornagliotti, E.
dc.contributor.authorZuschlag, A.
dc.contributor.authorMicard, G.
dc.contributor.authorHahn, G.
dc.contributor.authorColetti, G.
dc.contributor.authorLai, Barry
dc.contributor.authorBuonassisi, Tonio
dc.date.accessioned2013-04-04T19:01:27Z
dc.date.available2013-04-04T19:01:27Z
dc.date.issued2010-06
dc.identifier.isbn978-1-4244-5890-5
dc.identifier.issn0160-8371
dc.identifier.otherINSPEC Accession Number: 11625881
dc.identifier.urihttp://hdl.handle.net/1721.1/78294
dc.description.abstractIn this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PVSC.2010.5616904en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleImpact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cellsen_US
dc.typeArticleen_US
dc.identifier.citationBertoni, M.I. et al. “Impact of Defect Type on Hydrogen Passivation Effectiveness in Multicrystalline Silicon Solar Cells.” 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Hawaiian Convention Center, Honolulu, HI, USA, IEEE, 2010. 000345–000346. CrossRef. Web. ©2010 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.mitauthorBertoni, Mariana I.
dc.contributor.mitauthorHudelson, S.
dc.contributor.mitauthorNewman, Bonna Kay
dc.contributor.mitauthorBernardis, S.
dc.contributor.mitauthorFenning, David P.
dc.contributor.mitauthorBuonassisi, Tonio
dc.relation.journalProceedings of the 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
dspace.orderedauthorsBertoni, M.I.; Hudelson, S.; Newman, B.K.; Bernardis, S.; Fenning, D.P.; Dekkers, H.F.W.; Cornagliotti, E.; Zuschlag, A.; Micard, G.; Hahn, G.; Coletti, G.; Lai, B.; Buonassisi, T.en
dc.identifier.orcidhttps://orcid.org/0000-0002-4609-9312
dc.identifier.orcidhttps://orcid.org/0000-0001-8345-4937
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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