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Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

Author(s)
Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradecak, Silvija
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Abstract
We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.
Date issued
2013-06
URI
http://hdl.handle.net/1721.1/79628
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhou, Xiang, Ming-Yen Lu, Yu-Jung Lu, Shangjr Gwo, and Silvija Gradečak. “Correlation of doping, structure, and carrier dynamics in a single GaN nanorod.” Applied Physics Letters 102, no. 25 (2013): 253104. © 2013 AIP Publishing LLC
Version: Final published version
ISSN
00036951
1077-3118

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