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dc.contributor.authorZhou, Xiang
dc.contributor.authorLu, Ming-Yen
dc.contributor.authorLu, Yu-Jung
dc.contributor.authorGwo, Shangjr
dc.contributor.authorGradecak, Silvija
dc.date.accessioned2013-07-18T18:53:41Z
dc.date.available2013-07-18T18:53:41Z
dc.date.issued2013-06
dc.date.submitted2013-04
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/79628
dc.description.abstractWe report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4812241en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleCorrelation of doping, structure, and carrier dynamics in a single GaN nanoroden_US
dc.typeArticleen_US
dc.identifier.citationZhou, Xiang, Ming-Yen Lu, Yu-Jung Lu, Shangjr Gwo, and Silvija Gradečak. “Correlation of doping, structure, and carrier dynamics in a single GaN nanorod.” Applied Physics Letters 102, no. 25 (2013): 253104. © 2013 AIP Publishing LLCen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorZhou, Xiangen_US
dc.contributor.mitauthorGradecak, Silvijaen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradečak, Silvijaen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3852-3224
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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