Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs
Author(s)Wang, Jianfei; Zens, Timothy; Hu, Juejun; Becla, Piotr; Kimerling, Lionel C.; Agarwal, Anuradha Murthy; ... Show more Show less
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In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9]cmHz[superscript 1/2]W[superscript 1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
DepartmentMassachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Proceedings of SPIE--the International Society for Optical Engineering; v. 8034
Wang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs.” Proc. SPIE 8034, Photonic Microdevices/Microstructures for Sensing III, 80340K (May 16, 2011). © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)
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