Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform
Author(s)Wang, Jianfei; Hu, Juejun; Becla, Piotr; Kimerling, Lionel C.; Agarwal, Anuradha Murthy
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In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
DepartmentMassachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Optical Society of America
Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform.” Optics Express 18, no. 12 (June 1, 2010): 12890. © 2010 OSA
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