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dc.contributor.authorWang, Jianfei
dc.contributor.authorHu, Juejun
dc.contributor.authorBecla, Piotr
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorAgarwal, Anuradha Murthy
dc.date.accessioned2013-07-30T18:36:59Z
dc.date.available2013-07-30T18:36:59Z
dc.date.issued2010-06
dc.date.submitted2010-05
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/1721.1/79731
dc.description.abstractIn this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.en_US
dc.language.isoen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.18.012890en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleResonant-cavity-enhanced mid-infrared photodetector on a silicon platformen_US
dc.typeArticleen_US
dc.identifier.citationWang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform.” Optics Express 18, no. 12 (June 1, 2010): 12890. © 2010 OSAen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorWang, Jianfeien_US
dc.contributor.mitauthorHu, Juejunen_US
dc.contributor.mitauthorBecla, Piotren_US
dc.contributor.mitauthorAgarwal, Anuradha Murthyen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.relation.journalOptics Expressen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Jianfei; Hu, Juejun; Becla, Piotr; Agarwal, Anuradha M.; Kimerling, Lionel C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7233-3918
dc.identifier.orcidhttps://orcid.org/0000-0002-0769-0652
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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