dc.contributor.author | Wang, Jianfei | |
dc.contributor.author | Hu, Juejun | |
dc.contributor.author | Becla, Piotr | |
dc.contributor.author | Kimerling, Lionel C. | |
dc.contributor.author | Agarwal, Anuradha Murthy | |
dc.date.accessioned | 2013-07-30T18:36:59Z | |
dc.date.available | 2013-07-30T18:36:59Z | |
dc.date.issued | 2010-06 | |
dc.date.submitted | 2010-05 | |
dc.identifier.issn | 1094-4087 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/79731 | |
dc.description.abstract | In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits. | en_US |
dc.language.iso | en_US | |
dc.publisher | Optical Society of America | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1364/OE.18.012890 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | MIT web domain | en_US |
dc.title | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform.” Optics Express 18, no. 12 (June 1, 2010): 12890. © 2010 OSA | en_US |
dc.contributor.department | MIT Materials Research Laboratory | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.mitauthor | Wang, Jianfei | en_US |
dc.contributor.mitauthor | Hu, Juejun | en_US |
dc.contributor.mitauthor | Becla, Piotr | en_US |
dc.contributor.mitauthor | Agarwal, Anuradha Murthy | en_US |
dc.contributor.mitauthor | Kimerling, Lionel C. | en_US |
dc.relation.journal | Optics Express | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Wang, Jianfei; Hu, Juejun; Becla, Piotr; Agarwal, Anuradha M.; Kimerling, Lionel C. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-7233-3918 | |
dc.identifier.orcid | https://orcid.org/0000-0002-0769-0652 | |
dc.identifier.orcid | https://orcid.org/0000-0002-3913-6189 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |