MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Large inherent optical gain from the direct gap transition of Ge thin films

Author(s)
Wang, Xiaoxin; Kimerling, Lionel C.; Michel, Jurgen; Liu, Jifeng
Thumbnail
DownloadKimerling_Large inherent.pdf (880.3Kb)
PUBLISHER_POLICY

Publisher Policy

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscript +] Ge-on-Si films and intrinsic Ge-on-insulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering. This inherent direct gap gain is comparable to III-V semiconductors. For n[superscript +] Ge, this transient gain is ∼25× larger than its steady state gain, suggesting that reducing Γ→L or enhancing L→Γ intervalley scattering may significantly increase the optical gain of Ge lasers.
Date issued
2013-04
URI
http://hdl.handle.net/1721.1/79733
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Wang, Xiaoxin et al. “Large Inherent Optical Gain from the Direct Gap Transition of Ge Thin Films.” Applied Physics Letters 102.13 (2013): 131116. © 2013 American Institute of Physics
Version: Final published version
ISSN
00036951
1077-3118

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.