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dc.contributor.authorWang, Xiaoxin
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.contributor.authorLiu, Jifeng
dc.date.accessioned2013-07-30T18:41:15Z
dc.date.available2013-07-30T18:41:15Z
dc.date.issued2013-04
dc.date.submitted2013-01
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/79733
dc.description.abstractThe recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscript +] Ge-on-Si films and intrinsic Ge-on-insulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering. This inherent direct gap gain is comparable to III-V semiconductors. For n[superscript +] Ge, this transient gain is ∼25× larger than its steady state gain, suggesting that reducing Γ→L or enhancing L→Γ intervalley scattering may significantly increase the optical gain of Ge lasers.en_US
dc.description.sponsorshipAPIC Corporation. Fully LASER Integrated Photonics (FLIP) Programen_US
dc.description.sponsorshipNaval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-0002)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4800015en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleLarge inherent optical gain from the direct gap transition of Ge thin filmsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Xiaoxin et al. “Large Inherent Optical Gain from the Direct Gap Transition of Ge Thin Films.” Applied Physics Letters 102.13 (2013): 131116. © 2013 American Institute of Physicsen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Xiaoxin; Kimerling, Lionel C.; Michel, Jurgen; Liu, Jifengen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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