Direct band gap narrowing in highly doped Ge

Author(s)
Han, Zhaohong; Cai, Yan; Kimerling, Lionel C.; Michel, Jurgen; Camacho-Aguilera, Rodolfo Ernesto
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Abstract
Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E[subscript BGN] = 0.013 eV and Δ[subscript BGN] = 10[superscript −21] eV/cm[superscript −3]. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated.
Date issued
2013-04
URI
http://hdl.handle.net/1721.1/79738
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Camacho-Aguilera, Rodolfo et al. “Direct Band Gap Narrowing in Highly Doped Ge.” Applied Physics Letters 102.15 (2013): 152106. © 2013 AIP Publishing LLC
Version: Final published version
ISSN
00036951
1077-3118
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