| dc.contributor.author | Han, Zhaohong | |
| dc.contributor.author | Cai, Yan | |
| dc.contributor.author | Kimerling, Lionel C. | |
| dc.contributor.author | Michel, Jurgen | |
| dc.contributor.author | Camacho-Aguilera, Rodolfo Ernesto | |
| dc.date.accessioned | 2013-07-31T14:58:25Z | |
| dc.date.available | 2013-07-31T14:58:25Z | |
| dc.date.issued | 2013-04 | |
| dc.date.submitted | 2013-01 | |
| dc.identifier.issn | 00036951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/79738 | |
| dc.description.abstract | Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E[subscript BGN] = 0.013 eV and Δ[subscript BGN] = 10[superscript −21] eV/cm[superscript −3]. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated. | en_US |
| dc.description.sponsorship | United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-Based Laser Initiative) | en_US |
| dc.description.sponsorship | APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics (AIP) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.4802199 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | Direct band gap narrowing in highly doped Ge | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Camacho-Aguilera, Rodolfo et al. “Direct Band Gap Narrowing in Highly Doped Ge.” Applied Physics Letters 102.15 (2013): 152106. © 2013 AIP Publishing LLC | en_US |
| dc.contributor.department | MIT Materials Research Laboratory | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.mitauthor | Camacho-Aguilera, Rodolfo Ernesto | en_US |
| dc.contributor.mitauthor | Han, Zhaohong | en_US |
| dc.contributor.mitauthor | Cai, Yan | en_US |
| dc.contributor.mitauthor | Kimerling, Lionel C. | en_US |
| dc.contributor.mitauthor | Michel, Jurgen | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Camacho-Aguilera, Rodolfo; Han, Zhaohong; Cai, Yan; Kimerling, Lionel C.; Michel, Jurgen | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0003-2954-8005 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-3913-6189 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
