Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon

Author(s)
Wang, Jianfei; Zens, Timothy; Hu, Juejun; Becla, Piotr; Kimerling, Lionel C.; ... Show more
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Abstract
In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection.
Date issued
2012-05
URI
http://hdl.handle.net/1721.1/79743
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Wang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, and Anuradha M. Agarwal. “Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon.” Applied Physics Letters 100, no. 21 (2012): 211106. © 2012 American Institute of Physics
Version: Final published version
ISSN
00036951
1077-3118
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