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dc.contributor.authorWang, Jianfei
dc.contributor.authorZens, Timothy
dc.contributor.authorHu, Juejun
dc.contributor.authorBecla, Piotr
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorAgarwal, Anuradha Murthy
dc.date.accessioned2013-07-31T17:46:19Z
dc.date.available2013-07-31T17:46:19Z
dc.date.issued2012-05
dc.date.submitted2012-04
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/79743
dc.description.abstractIn this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection.en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4722917en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleMonolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on siliconen_US
dc.typeArticleen_US
dc.identifier.citationWang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, and Anuradha M. Agarwal. “Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon.” Applied Physics Letters 100, no. 21 (2012): 211106. © 2012 American Institute of Physicsen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorWang, Jianfeien_US
dc.contributor.mitauthorZens, Timothyen_US
dc.contributor.mitauthorHu, Juejunen_US
dc.contributor.mitauthorBecla, Piotren_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorAgarwal, Anuradha Murthyen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Jianfei; Zens, Timothy; Hu, Juejun; Becla, Piotr; Kimerling, Lionel C.; Agarwal, Anuradha M.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7233-3918
dc.identifier.orcidhttps://orcid.org/0000-0002-0769-0652
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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