Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates

Author(s)
Vanhoutte, Michiel; Wang, Bing; Zhou, Zhiping; Michel, Jurgen; Kimerling, Lionel C.
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Abstract
Sensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.
Date issued
2010-09
URI
http://hdl.handle.net/1721.1/79771
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Proceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Vanhoutte, Michiel, Bing Wang, Zhiping Zhou, Jurgen Michel, and Lionel C. Kimerling. “Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates.” In 7th IEEE International Conference on Group IV Photonics, 308-310. Institute of Electrical and Electronics Engineers, 2010. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-6344-2
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