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dc.contributor.authorVanhoutte, Michiel
dc.contributor.authorWang, Bing
dc.contributor.authorZhou, Zhiping
dc.contributor.authorMichel, Jurgen
dc.contributor.authorKimerling, Lionel C.
dc.date.accessioned2013-08-05T14:07:10Z
dc.date.available2013-08-05T14:07:10Z
dc.date.issued2010-09
dc.identifier.isbn978-1-4244-6344-2
dc.identifier.urihttp://hdl.handle.net/1721.1/79771
dc.description.abstractSensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-based Laser Initiative)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/GROUP4.2010.5643345en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleDirect demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicatesen_US
dc.typeArticleen_US
dc.identifier.citationVanhoutte, Michiel, Bing Wang, Zhiping Zhou, Jurgen Michel, and Lionel C. Kimerling. “Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates.” In 7th IEEE International Conference on Group IV Photonics, 308-310. Institute of Electrical and Electronics Engineers, 2010. © Copyright 2010 IEEEen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorVanhoutte, Michielen_US
dc.contributor.mitauthorWang, Bingen_US
dc.contributor.mitauthorZhou, Zhipingen_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.relation.journalProceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference onen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsVanhoutte, Michiel; Wang, Bing; Zhou, Zhiping; Michel, Jurgen; Kimerling, Lionel C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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