Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Author(s)
Sun, Xiaochen; Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen
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Abstract
Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.
Date issued
2009-07
URI
http://hdl.handle.net/1721.1/79793
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Applied Physics Letters
Publisher
American Physical Society
Citation
Sun, Xiaochen, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel. “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si.” Applied Physics Letters 95, no. 1 (2009): 011911. © 2009 American Institute of Physics.
Version: Final published version
ISSN
00036951
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