dc.contributor.author | Sun, Xiaochen | |
dc.contributor.author | Liu, Jifeng | |
dc.contributor.author | Kimerling, Lionel C. | |
dc.contributor.author | Michel, Jurgen | |
dc.date.accessioned | 2013-08-05T20:10:24Z | |
dc.date.available | 2013-08-05T20:10:24Z | |
dc.date.issued | 2009-07 | |
dc.date.submitted | 2009-02 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/79793 | |
dc.description.abstract | Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band. | en_US |
dc.description.sponsorship | United States. Air Force Office of Scientific Research (Multidisciplinary University Research Initiative) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.3170870 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | MIT web domain | en_US |
dc.title | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Sun, Xiaochen, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel. “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si.” Applied Physics Letters 95, no. 1 (2009): 011911. © 2009 American Institute of Physics. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microphotonics Center | en_US |
dc.contributor.mitauthor | Sun, Xiaochen | en_US |
dc.contributor.mitauthor | Liu, Jifeng | en_US |
dc.contributor.mitauthor | Michel, Jurgen | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Sun, Xiaochen; Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen | en_US |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |