Optical gain and lasing from band-engineered Ge-on-Si at room temperature

Author(s)
Liu, Jifeng; Sun, Xiaochen; Camacho-Aguilera, Rodolfo Ernesto; Cai, Yan; Kimerling, Lionel C.; ... Show more
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Abstract
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
Date issued
2010-07
URI
http://hdl.handle.net/1721.1/79799
Department
Massachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Proceedings of the 2010 15th OptoeElectronics and Communications Conference (OECC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Jifeng, Liu et al. "Optical gain and lasing from band-engineered Ge-on-Si at room temperature." 15th OptoElectronics and Communications Conference (OECC2010) Technical Digest, July 2010, Sapporo Convention Center, Japan. Copyright © 2010, by The Institute of Electronics, Information and Communication Engineers
Version: Final published version
ISBN
978-1-4244-6785-3
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