Optical gain and lasing from band-engineered Ge-on-Si at room temperature
DownloadKimerling_Optical gain.pdf (1.030Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
Date issued
2010-07Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
Proceedings of the 2010 15th OptoeElectronics and Communications Conference (OECC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Jifeng, Liu et al. "Optical gain and lasing from band-engineered Ge-on-Si at room temperature." 15th OptoElectronics and Communications Conference (OECC2010) Technical Digest, July 2010, Sapporo Convention Center, Japan. Copyright © 2010, by The Institute of Electronics, Information and Communication Engineers
Version: Final published version
ISBN
978-1-4244-6785-3