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Optical gain and lasing from band-engineered Ge-on-Si at room temperature

dc.contributor.authorLiu, Jifeng
dc.contributor.authorSun, Xiaochen
dc.contributor.authorCamacho-Aguilera, Rodolfo Ernesto
dc.contributor.authorCai, Yan
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.date.accessioned2013-08-08T13:50:12Z
dc.date.available2013-08-08T13:50:12Z
dc.date.issued2010-07
dc.identifier.isbn978-1-4244-6785-3
dc.identifier.urihttp://hdl.handle.net/1721.1/79799
dc.description.abstractWe present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiativeen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5588537en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleOptical gain and lasing from band-engineered Ge-on-Si at room temperatureen_US
dc.typeArticleen_US
dc.identifier.citationJifeng, Liu et al. "Optical gain and lasing from band-engineered Ge-on-Si at room temperature." 15th OptoElectronics and Communications Conference (OECC2010) Technical Digest, July 2010, Sapporo Convention Center, Japan. Copyright © 2010, by The Institute of Electronics, Information and Communication Engineersen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorLiu, Jifengen_US
dc.contributor.mitauthorSun, Xiaochenen_US
dc.contributor.mitauthorCamacho-Aguilera, Rodolfo Ernestoen_US
dc.contributor.mitauthorCai, Yanen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalProceedings of the 2010 15th OptoeElectronics and Communications Conference (OECC)en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsLiu, Jifeng; Sun, Xiaochen; Camacho-Aguilera, R.; Cai, Yan; Kimerling, L.C.; Michel, J.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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