Band-engineered Ge-on-Si lasers
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We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between direct and indirect band gaps for efficient light emission. Modeling of Ge/Si double heterojunction LEDs shows that it is possible to achieve >;10% quantum efficiency even assuming an Auger coefficient 10 times larger than reports in literature. Edge-emitting Ge-on-Si waveguide LEDs have also been demonstrated at room temperature. These simulation and experimental results strongly indicate the feasibility of electrically-pumped Ge-on-Si lasers.
Date issued
2010-12Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
2010 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Jurgen Michel, and Lionel C. Kimerling. “Band-engineered Ge-on-Si lasers.” In 2010 International Electron Devices Meeting, 6.6.1-6.6.4. Institute of Electrical and Electronics Engineers, 2010. © 2010 IEEE
Version: Final published version
ISBN
978-1-4424-7418-5