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Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

Author(s)
Ahn, Donghwan; Hong, Ching-Yin; Kimerling, Lionel C.; Michel, Jurgen
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Abstract
A waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides.
Date issued
2009-02
URI
http://hdl.handle.net/1721.1/80264
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Ahn, Donghwan, Ching-Yin Hong, Lionel C. Kimerling, and Jurgen Michel. “Coupling efficiency of monolithic, waveguide-integrated Si photodetectors.” Applied Physics Letters 94, no. 8 (2009): 081108. © 2009 American Institute of Physics.
Version: Final published version
ISSN
00036951
1077-3118

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