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dc.contributor.authorAhn, Donghwan
dc.contributor.authorHong, Ching-Yin
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.date.accessioned2013-08-23T15:30:07Z
dc.date.available2013-08-23T15:30:07Z
dc.date.issued2009-02
dc.date.submitted2008-10
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/80264
dc.description.abstractA waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides.en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3089359en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleCoupling efficiency of monolithic, waveguide-integrated Si photodetectorsen_US
dc.typeArticleen_US
dc.identifier.citationAhn, Donghwan, Ching-Yin Hong, Lionel C. Kimerling, and Jurgen Michel. “Coupling efficiency of monolithic, waveguide-integrated Si photodetectors.” Applied Physics Letters 94, no. 8 (2009): 081108. © 2009 American Institute of Physics.en_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorAhn, Donghwanen_US
dc.contributor.mitauthorHong, Ching-Yinen_US
dc.contributor.mitauthorKimerling, Lionel Cen_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAhn, Donghwan; Hong, Ching-yin; Kimerling, Lionel C.; Michel, Jurgenen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US


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