dc.contributor.author | Ahn, Donghwan | |
dc.contributor.author | Hong, Ching-Yin | |
dc.contributor.author | Kimerling, Lionel C. | |
dc.contributor.author | Michel, Jurgen | |
dc.date.accessioned | 2013-08-23T15:30:07Z | |
dc.date.available | 2013-08-23T15:30:07Z | |
dc.date.issued | 2009-02 | |
dc.date.submitted | 2008-10 | |
dc.identifier.issn | 00036951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/80264 | |
dc.description.abstract | A waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides. | en_US |
dc.language.iso | en_US | |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.3089359 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | MIT web domain | en_US |
dc.title | Coupling efficiency of monolithic, waveguide-integrated Si photodetectors | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Ahn, Donghwan, Ching-Yin Hong, Lionel C. Kimerling, and Jurgen Michel. “Coupling efficiency of monolithic, waveguide-integrated Si photodetectors.” Applied Physics Letters 94, no. 8 (2009): 081108. © 2009 American Institute of Physics. | en_US |
dc.contributor.department | MIT Materials Research Laboratory | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.mitauthor | Ahn, Donghwan | en_US |
dc.contributor.mitauthor | Hong, Ching-Yin | en_US |
dc.contributor.mitauthor | Kimerling, Lionel C | en_US |
dc.contributor.mitauthor | Michel, Jurgen | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Ahn, Donghwan; Hong, Ching-yin; Kimerling, Lionel C.; Michel, Jurgen | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-3913-6189 | |
dspace.mitauthor.error | true | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |