Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer
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Kimerling_Transparent amorphous.pdf
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Author(s)
Sun, Rong
McComber, Kevin A.
Cheng, Jing
Sparacin, Daniel K.
Beals, Mark A.
Michel, Jurgen
Kimerling, Lionel C.
Date Issued
April 2009
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Sun, Rong, Kevin McComber, Jing Cheng, Daniel K. Sparacin, Mark Beals, Jurgen Michel, and Lionel C. Kimerling. “Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer.” Applied Physics Letters 94, no. 14 (2009): 141108. © 2009 American Institute of Physics.
Version
Final published version
Abstract
We have experimentally demonstrated single mode amorphous silicon channel waveguides with low optical transmission loss of 2.7±0.4 dB/cm for TE mode in the 1550 nm range. This result was achieved by using hydrogen passivation of a-Si dangling bonds and a thin, low loss silicon nitride intercladding layer prepared by plasma enhanced chemical vapor deposition between the waveguide core and the oxide cladding layer. The silicon nitride intercladding layer reduces waveguide sidewall roughness scattering and preserves the hydrogen passivation.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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DOI of Published Version
https://doi.org/10.1063/1.3117363
