Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer
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We have experimentally demonstrated single mode amorphous silicon channel waveguides with low optical transmission loss of 2.7±0.4 dB/cm for TE mode in the 1550 nm range. This result was achieved by using hydrogen passivation of a-Si dangling bonds and a thin, low loss silicon nitride intercladding layer prepared by plasma enhanced chemical vapor deposition between the waveguide core and the oxide cladding layer. The silicon nitride intercladding layer reduces waveguide sidewall roughness scattering and preserves the hydrogen passivation.
Date issued
2009-04Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Sun, Rong, Kevin McComber, Jing Cheng, Daniel K. Sparacin, Mark Beals, Jurgen Michel, and Lionel C. Kimerling. “Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer.” Applied Physics Letters 94, no. 14 (2009): 141108. © 2009 American Institute of Physics.
Version: Final published version
ISSN
00036951