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dc.contributor.authorSun, Rong
dc.contributor.authorMcComber, Kevin A.
dc.contributor.authorCheng, Jing
dc.contributor.authorSparacin, Daniel K.
dc.contributor.authorBeals, Mark A.
dc.contributor.authorMichel, Jurgen
dc.contributor.authorKimerling, Lionel C.
dc.date.accessioned2013-10-04T16:13:59Z
dc.date.available2013-10-04T16:13:59Z
dc.date.issued2009-04
dc.date.submitted2008-11
dc.identifier.issn00036951
dc.identifier.urihttp://hdl.handle.net/1721.1/81319
dc.description.abstractWe have experimentally demonstrated single mode amorphous silicon channel waveguides with low optical transmission loss of 2.7±0.4 dB/cm for TE mode in the 1550 nm range. This result was achieved by using hydrogen passivation of a-Si dangling bonds and a thin, low loss silicon nitride intercladding layer prepared by plasma enhanced chemical vapor deposition between the waveguide core and the oxide cladding layer. The silicon nitride intercladding layer reduces waveguide sidewall roughness scattering and preserves the hydrogen passivation.en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3117363en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleTransparent amorphous silicon channel waveguides with silicon nitride intercladding layeren_US
dc.typeArticleen_US
dc.identifier.citationSun, Rong, Kevin McComber, Jing Cheng, Daniel K. Sparacin, Mark Beals, Jurgen Michel, and Lionel C. Kimerling. “Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer.” Applied Physics Letters 94, no. 14 (2009): 141108. © 2009 American Institute of Physics.en_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorSun, Rongen_US
dc.contributor.mitauthorMcComber, Kevin A.en_US
dc.contributor.mitauthorCheng, Jingen_US
dc.contributor.mitauthorSparacin, Daniel K.en_US
dc.contributor.mitauthorBeals, Mark A.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsSun, Rong; McComber, Kevin; Cheng, Jing; Sparacin, Daniel K.; Beals, Mark; Michel, Jurgen; Kimerling, Lionel C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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