Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
Author(s)Mendoza, Hiroshi A.; Ashall, Daniel T.; Yin, Allen S.; Baldo, Marc A.; Bahlke, Matthias Erhard
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To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Bahlke, Matthias E., Hiroshi A. Mendoza, Daniel T. Ashall, Allen S. Yin, and Marc A. Baldo. “Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists.” Advanced Materials 24, no. 46 (December 4, 2012): 6136-6140. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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