Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
Author(s)
Mendoza, Hiroshi A.; Ashall, Daniel T.; Yin, Allen S.; Baldo, Marc A.; Bahlke, Matthias Erhard
DownloadBahlke_2012-Dry lithography of.pdf (893.6Kb)
PUBLISHER_CC
Publisher with Creative Commons License
Creative Commons Attribution
Terms of use
Metadata
Show full item recordAbstract
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
Date issued
2012-09Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Advanced Materials
Publisher
Wiley Blackwell
Citation
Bahlke, Matthias E., Hiroshi A. Mendoza, Daniel T. Ashall, Allen S. Yin, and Marc A. Baldo. “Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists.” Advanced Materials 24, no. 46 (December 4, 2012): 6136-6140. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Version: Final published version
ISSN
09359648
1521-4095