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dc.contributor.authorMendoza, Hiroshi A.
dc.contributor.authorAshall, Daniel T.
dc.contributor.authorYin, Allen S.
dc.contributor.authorBaldo, Marc A.
dc.contributor.authorBahlke, Matthias Erhard
dc.date.accessioned2013-12-09T14:17:24Z
dc.date.available2013-12-09T14:17:24Z
dc.date.issued2012-09
dc.date.submitted2012-08
dc.identifier.issn09359648
dc.identifier.issn1521-4095
dc.identifier.urihttp://hdl.handle.net/1721.1/82881
dc.description.abstractTo address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)en_US
dc.description.sponsorshipMIT Energy Initiative (Graduate Fellowship in Energy)en_US
dc.language.isoen_US
dc.publisherWiley Blackwellen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/adma.201202446en_US
dc.rights.urihttp://creativecommons.org/licenses/by/2.5/en_US
dc.sourcePMCen_US
dc.titleDry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resistsen_US
dc.typeArticleen_US
dc.identifier.citationBahlke, Matthias E., Hiroshi A. Mendoza, Daniel T. Ashall, Allen S. Yin, and Marc A. Baldo. “Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists.” Advanced Materials 24, no. 46 (December 4, 2012): 6136-6140. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorBahlke, Matthias Erharden_US
dc.contributor.mitauthorMendoza, Hiroshi A.en_US
dc.contributor.mitauthorYin, Allen S.en_US
dc.contributor.mitauthorBaldo, Marc A.en_US
dc.relation.journalAdvanced Materialsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsBahlke, Matthias E.; Mendoza, Hiroshi A.; Ashall, Daniel T.; Yin, Allen S.; Baldo, Marc A.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2201-5257
mit.licensePUBLISHER_CCen_US
mit.metadata.statusComplete


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