| dc.contributor.author | Milaninia, Kaveh M. | |
| dc.contributor.author | Baldo, Marc A. | |
| dc.contributor.author | Reina, Alfonso | |
| dc.contributor.author | Kong, Jing | |
| dc.date.accessioned | 2014-03-28T16:31:35Z | |
| dc.date.available | 2014-03-28T16:31:35Z | |
| dc.date.issued | 2009-11 | |
| dc.date.submitted | 2009-09 | |
| dc.identifier.issn | 00036951 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/85955 | |
| dc.description.abstract | We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film by application of approximately 5 V between the layers. Contact is broken by mechanical restoring forces after bias is removed. The device switches several times before tearing. Demonstration of switching at low voltage confirms that graphene is an attractive material for electromechanical switches. Reliability may be improved by scaling the device area to within one crystalline domain of the graphene films. | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (Grant N66001-08-1-2002) | en_US |
| dc.description.sponsorship | Microelectronics Advanced Research Corporation (MARCO). Interconnect Focus Center | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics (AIP) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.3259415 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | All graphene electromechanical switch fabricated by chemical vapor deposition | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Milaninia, Kaveh M., Marc A. Baldo, Alfonso Reina, and Jing Kong. “All Graphene Electromechanical Switch Fabricated by Chemical Vapor Deposition.” Appl. Phys. Lett. 95, no. 18 (2009): 183105. © 2009 American Institute of Physics | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.mitauthor | Milaninia, Kaveh M. | en_US |
| dc.contributor.mitauthor | Baldo, Marc A. | en_US |
| dc.contributor.mitauthor | Reina, Alfonso | en_US |
| dc.contributor.mitauthor | Kong, Jing | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Milaninia, Kaveh M.; Baldo, Marc A.; Reina, Alfonso; Kong, Jing | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0003-0551-1208 | |
| dc.identifier.orcid | https://orcid.org/0000-0003-2201-5257 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
