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dc.contributor.authorMoura, L. G.
dc.contributor.authorMoutinho, M. V. O.
dc.contributor.authorVenezuela, P.
dc.contributor.authorFantini, C.
dc.contributor.authorRighi, A.
dc.contributor.authorPimenta, M. A.
dc.contributor.authorStrano, Michael S.
dc.date.accessioned2014-04-07T18:53:02Z
dc.date.available2014-04-07T18:53:02Z
dc.date.issued2014-01
dc.date.submitted2013-10
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/86073
dc.description.abstractWe present in this work measurements of the Raman excitation profile of the high-energy phonons (G band) in single-chirality (n,m) semiconducting single-wall carbon nanotubes using more than 70 laser excitation energies, and a theoretical description based on the third-order quantum model for Raman scattering. We show that the observed asymmetry in the G band Raman excitation profile is rigorously explained by considering all physical elements associated with Raman scattering in (n,m) carbon nanotubes, such as the existence of van Hove singularities in the electronic density of states and wave-vector dependence of the matrix elements of the Raman process. We conclude that the proposed violation of the Condon approximation is not a fundamental principle underlying the nanotube photophysics.en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.89.035402en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleRaman excitation profile of the G band in single-chirality carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.citationMoura, L. G., M. V. O. Moutinho, P. Venezuela, C. Fantini, A. Righi, M. S. Strano, and M. A. Pimenta. “Raman Excitation Profile of the G Band in Single-Chirality Carbon Nanotubes.” Phys. Rev. B 89, no. 3 (January 2014). © 2014 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.mitauthorStrano, Michael S.en_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2014-04-01T21:36:28Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsMoura, L. G.; Moutinho, M. V. O.; Venezuela, P.; Fantini, C.; Righi, A.; Strano, M. S.; Pimenta, M. A.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2944-808X
mit.licensePUBLISHER_POLICYen_US


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