MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method

Author(s)
Tian, Zhiting; Esfarjani, Keivan; Chen, Gang
Thumbnail
DownloadSiGe_Nov21.pdf (423.8Kb)
OPEN_ACCESS_POLICY

Open Access Policy

Creative Commons Attribution-Noncommercial-Share Alike

Terms of use
Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
Metadata
Show full item record
Abstract
Knowledge on phonon transmittance as a function of phonon frequency and incidence angle at interfaces is vital for multiscale modeling of heat transport in nanostructured materials. Although thermal conductivity reduction in nanostructured materials can usually be described by phonon scattering due to interface roughness, we show how a Green's function method in conjunction with the Landauer formalism suggests that interface roughness induced by atomic mixing can increase phonon transmission and interfacial thermal conductance. This is an attempt to incorporate first-principles force constants derived from ab initio density-functional theory (DFT) into Green's function calculation for infinitely large three-dimensional crystal structure. We also demonstrate the importance of accurate force constants by comparing the phonon transmission and thermal conductance using force constants obtained from semiempirical Stillinger-Weber potential and first-principles DFT calculations.
Date issued
2012-12
URI
http://hdl.handle.net/1721.1/86890
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Tian, Zhiting, Keivan Esfarjani, and Gang Chen. “Enhancing Phonon Transmission Across a Si/Ge Interface by Atomic Roughness: First-Principles Study with the Green’s Function Method.” Phys. Rev. B 86, no. 23 (December 2012).
Version: Author's final manuscript
ISSN
1098-0121
1550-235X

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.