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dc.contributor.authorTian, Zhiting
dc.contributor.authorEsfarjani, Keivan
dc.contributor.authorChen, Gang
dc.date.accessioned2014-05-09T13:41:07Z
dc.date.available2014-05-09T13:41:07Z
dc.date.issued2012-12
dc.date.submitted2012-08
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/86890
dc.description.abstractKnowledge on phonon transmittance as a function of phonon frequency and incidence angle at interfaces is vital for multiscale modeling of heat transport in nanostructured materials. Although thermal conductivity reduction in nanostructured materials can usually be described by phonon scattering due to interface roughness, we show how a Green's function method in conjunction with the Landauer formalism suggests that interface roughness induced by atomic mixing can increase phonon transmission and interfacial thermal conductance. This is an attempt to incorporate first-principles force constants derived from ab initio density-functional theory (DFT) into Green's function calculation for infinitely large three-dimensional crystal structure. We also demonstrate the importance of accurate force constants by comparing the phonon transmission and thermal conductance using force constants obtained from semiempirical Stillinger-Weber potential and first-principles DFT calculations.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Solid-State Solar-Thermal Energy Conversion Center Award DE-FG02-09ER46577)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.86.235304en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceBolin Liaoen_US
dc.titleEnhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function methoden_US
dc.typeArticleen_US
dc.identifier.citationTian, Zhiting, Keivan Esfarjani, and Gang Chen. “Enhancing Phonon Transmission Across a Si/Ge Interface by Atomic Roughness: First-Principles Study with the Green’s Function Method.” Phys. Rev. B 86, no. 23 (December 2012).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorTian, Zhitingen_US
dc.contributor.mitauthorEsfarjani, Keivanen_US
dc.contributor.mitauthorChen, Gangen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsTian, Zhiting; Esfarjani, Keivan; Chen, Gangen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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